دانلود کتاب Electronic Conduction: Classical and Quantum Theory to Nanoelectronic Devices (Textbook Series in Physical Sciences)

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Cover Half Title Series Page Title Page Copyright Page Dedication Contents Preface About the Author PART I: Prerequisites: Quantum Mechanics and the Electronic States in Solids CHAPTER 1: Quantum Mechanics 1.1. THE TWO-SLIT EXPERIMENT 1.2. THE SCHROEDINGER EQUATION, WAVEFUNCTIONS AND OPERATORS 1.3. PARTICLE IN A RECTANGULAR BOX 1.4. MORE QUANTUM MECHANICS, HEISENBERG’S UNCERTAINTY PRINCIPLE 1.5. STATISTICS OF ELECTRON OCCUPANCY, THE PAULI PRINCIPLE AND THE FERMI – DIRAC DISTRIBUTION 1.6. THE HYDROGEN ATOM AND THE ATOMS OF THE PERIODIC TABLE 1.7. BARRIER PENETRATION, TUNNELLING 1.8. PROBABILITY CURRENT DENSITY AND THE WKB APPROXIMATION CHAPTER 2: Electron States in Solids 2.1. QUALITATIVE DESCRIPTION OF SOLIDS AND THEIR ENERGY BANDS 2.2. THE k-SPACE, BLOCH’S THEOREM AND BRILLOUIN ZONES 2.3. THE LCAO METHOD OF CALCULATING ENERGY LEVELS 2.4. QUICK REVISION OF THE CONCEPT OF A HOLE AND DOPING 2.5. VELOCITY OF ELECTRONS IN SOLIDS 2.6. THE CONCEPT OF EFFECTIVE MASS 2.7. CONCENTRATION OF CARRIERS IN SEMICONDUCTORS AND METALS 2.8. THE EFFECTIVE MASS EQUATION PART II: Theory of Conduction CHAPTER 3: Simple Classical Theory of Conduction 3.1. EXTERNAL VOLTAGES AND FERMI LEVELS 3.2. COLLISIONS AND DRIFT MOBILITY 3.3. MECHANISMS OF SCATTERING 3.4. RECOMBINATION OF CARRIERS 3.5. DIFFUSION CURRENT 3.6. CONTINUITY EQUATIONS 3.7. THE IDEAL PN JUNCTION AT EQUILIBRIUM 3.8. THE IDEAL PN JUNCTION UNDER BIAS 3.9. THE NON-IDEAL, REAL PN JUNCTION 3.10. THE METAL–SEMICONDUCTOR OR SCHOTTKY JUNCTION CHAPTER 4: Advanced Classical Theory of Conduction 4.1. THE NEED FOR A BETTER CLASSICAL THEORY OF CONDUCTION 4.2. THE BOLTZMANN EQUATION 4.3. SOLUTION OF THE BOLTZMANN EQUATION BY THE RELAXATION TIME APPROXIMATION 4.4. APPLICATION OF AN ELECTRIC FIELD–CONDUCTIVITY OF SOLIDS 4.5. DIFFUSION CURRENTS 4.6. GENERAL EXPRESSION FOR THE CURRENT DENSITY 4.7. APPLICATION OF A THERMAL GRADIENT, THE SEEBECK EFFECT 4.8. SATURATION OF DRIFT VELOCITY 4.9. GUNN EFFECT AND VELOCITY OVERSHOOT 4.10. THE (CLASSICAL) HALL EFFECT CHAPTER 5: The Quantum Theory of Conduction 5.1. CRITIQUE OF THE BOLTZMANN EQUATION, REGIMES OF CONDUCTION 5.2. ELECTRONIC STRUCTURE OF LOW-DIMENSIONAL SYSTEMS 5.3. THE LANDAUER FORMALISM 5.4. THE EFFECTIVE MASS EQUATION FOR HETEROSTRUCTURES 5.5. TRANSMISSION MATRICES, AIRY FUNCTIONS 5.6. THE RESONANT TUNNELLING DIODE OR RTD PART III: Devices CHAPTER 6: Field Emission and Vacuum Devices 6.1. INTRODUCTION 6.2. THE 1-DIMENSIONAL WKB EQUATION 6.3. FIELD EMISSION FROM PLANAR SURFACES 6.4. THE 3-DIMENSIONAL WKB PROBLEM 6.5. FIELD EMISSION FROM CURVED SURFACES (ELECTRON GUNS) 6.6. THE VACUUM TRANSISTOR CHAPTER 7: The MOSFET 7.1. INTRODUCTION 7.2. PRINCIPLE OF OPERATION OF THE MOSFET 7.3. SIMPLE CLASSICAL THEORY 7.4. ADVANCED CLASSICAL THEORY 7.5. QUANTUM THEORY OF THE MOSFET 7.6. TIME-DEPENDENT PERFORMANCE AND MOORE’S LAW 7.7. THE FINFET, A 3-DIMENSIONAL MOSFET CHAPTER 8: Post-Si FETs 8.1. INTRODUCTION 8.2. SIMPLE THEORY OF THE HEMT 8.3. ADVANCED THEORY OF THE HEMT 8.4. THE III–V MOSFET 8.5. THE CARBON NANOTUBE FET, CNFET, OR CNTFET APPENDIX A: Further Development of Quantum Mechanics, Angular Momentum, and Spin of the Electron APPENDIX B: Lattice Vibrations APPENDIX C: Impurity States in Semiconductors APPENDIX D: Direct and Indirect Band-Gap and Optical Transitions APPENDIX E: Proof of the Field Emission Formula BIBLIOGRAPHY INDEX