توضیحاتی در مورد کتاب Ic Fabrication Technology [Paperback]
نام کتاب : Ic Fabrication Technology [Paperback]
عنوان ترجمه شده به فارسی : فناوری ساخت آی سی [شومیز]
سری :
نویسندگان : BOSE
ناشر : MC GRAW HILL INDIA
سال نشر : 2011
تعداد صفحات : 369
ISBN (شابک) : 9781259029585
زبان کتاب : English
فرمت کتاب : pdf
حجم کتاب : 4 مگابایت
بعد از تکمیل فرایند پرداخت لینک دانلود کتاب ارائه خواهد شد. درصورت ثبت نام و ورود به حساب کاربری خود قادر خواهید بود لیست کتاب های خریداری شده را مشاهده فرمایید.
فهرست مطالب :
Title
Contents
1. Overview of Metal-Oxide-Semiconductor (MOS) Transistor
1.1 Introduction
1.2 Moore’s Law
1.3 Future Sizes of a Transistor and a Chip
1.4 Physics of Silicon
1.5 Silicon Devices
1.6 MOS Transistor
Summary
References
Multiple-Choice Questions
Descriptive Problems
2. Silicon Wafer Preparation for MOS Transistor Fabrication
2.1 Introduction
2.2 Silicon Crystal Structure
2.3 Defects in a Silicon Crystal
2.4 Single Crystalline Silicon-Wafer Fabrication for MOS Transistor Applications
2.5 Fabrication of Silicon Wafer from the Boule
2.6 Specifications of the Silicon Wafer
2.7 Defects and Impurities in the Silicon Wafer
2.8 Wafer Contaminations
Summary
References
Multiple-Choice Questions
Descriptive Problems
3. MOS Transistor Process Flow
3.1 Introduction
3.2 MOS Transistor Fabrication
3.3 Device Isolation
3.4 CMOS Fabrication
Summary
References
Multiple-Choice Questions
Descriptive Problems
4. Oxidation
4.1 Introduction
4.2 Structure of Silicon Dioxide
4.3 Oxidation Equipment and Process
4.4 Kinetics of Oxidation
4.5 Comment on the Deal-and-Grove Oxidation Model
4.6 Oxide Charges
4.7 Silicon Oxide Characterisation
4.8 Electrical Characterisation of MOS Capacitance
4.9 Case I: Non-Ideal Case
4.10 Case II: Ideal Case
4.11 Procedure of Oxide and Oxide/Silicon Interface Charge Measurements
4.12 Oxide Breakdown Measurements
4.13 Other Silicon Oxidation Techniques
Summary
References
Multiple-Choice Questions
Descriptive Problems
5. Mask
5.1 Introduction
5.2 Properties of Masks
5.3 Types of Masks and Mask Fabrication Techniques
Summary
References
Multiple-Choice Questions
Descriptive Problems
6. Lithography
6.1 Introduction
6.2 Photolithography Process
6.3 Photoresist
6.4 Non-Photoresist (Resist)
6.5 PR Cleaning Procedure
6.6 Light Source and the Optical Exposure System
6.7 Pattern Transferring Techniques and Mask Aligner
6.8 Optical Projection Lithography Technique
6.9 Non-Optical Projection Lithography Technique
6.10 Ion-Beam Lithography
Summary
References
Multiple-Choice Questions
Descriptive Problems
7. Etching
7.1 Introduction
7.2 Etching Techniques
7.3 Wet Etching of Common Films
7.4 Plasma Etching (Dry Etching)
7.5 Plasma Etching Mechanisms and Etching Modes
7.6 Plasma Etching Parameters
Summary
References
Multiple-Choice Questions
Descriptive Problems
8. Diffusion
8.1 Introduction
8.2 Diffusion Equipment and Process
8.3 Diffusion Models
8.4 Modification of Fick’s Law
8.5 Oxidation Effects on Diffusion
Summary
References
Multiple-Choice Questions
Descriptive Problems
9. Ion-Implantation
9.1 Introduction
9.2 Ion-Implantation Equipment
9.3 Ion-Implantation Parameters
9.4 Parameters Affecting the Dose and Uniformity
9.5 Advantages of Ion-Implantation
9.6 Disadvantages of Ion-Implantation
9.7 Ion-Implantation Model
9.8 Ion Stopping
9.9 Ion Channelling
9.10 Annealing
Summary
References
Multiple-Choice Questions
Descriptive Problems
10. Thin Film Deposition
10.1 Introduction
10.2 Film-Deposition Techniques
10.3 Metal Wirings and Contacts
10.4 Metal Film Deposition Techniques
10.5 Metal Alloy Deposition
10.6 Nitride Deposition
10.7 Silicide Deposition
10.8 Dielectric Deposition
10.9 Silicon Deposition
10.10 Film Thickness Measurements
Summary
References
Multiple-Choice Questions
Descriptive Problems
11. ULSI (nano) Fabrication
11.1 Introduction
11.2 Dielectric Film Deposition
11.3 Lithography
11.4 Etching
Summary
References
Index